System and method for identifying an individual

ABSTRACT

The present invention provides a system for identifying an individual provided with a portable communication device. In a system for identifying an individual using a portable communication device with a display, the display is a sensor-incorporated display, the sensor-incorporated display reads the biological information of a user, and, based on the read information, identifies an individual.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] This invention relates to a system for identifying an individualor a method for identifying the same, in particular, a system or amethod for identifying an individual by means of a display, which isprovided with a sensor.

[0003] 2. Description of the Related Art

[0004] In recent years, the communication technology through theInternet by means of portable communication device, such as a portabletelephone or a portable information terminal, are developing rapidly.The conventional Internet assures communication through a telephone lineto which a personal computer installed in an office or a house isconnected. However, recently, the i-mode that permits of utilization ofthe Internet easily through a portable telephone became popular andvarious exchanges of information became simple to carry out.

[0005] What is going to be described in this specification relates to asystem for identifying an individual by means of the Internet and aportable communication device.

[0006]FIG. 16 shows an example of conventional portable telephoneapparatus. A conventional telephone apparatus shown in FIG. 16 iscomprised of a main body 2601, a voice output part 2602, a voice inputpart 2603, a display 2604, operation switch 2605, an antenna 2606, etc.In case of an ordinary telephone call, the phone number of the oppositeend, the state of reception of radio wave, etc. are shown on the liquidcrystal display. And, in the case where the Internet is utilized, thenecessary information concerning the opposite end are to be displayed.

[0007] When receiving or giving money on the Internet by means of aconventional portable telephone as shown in FIG. 16, identification onthe person was necessary. In this case, the confirmation has beenexecuted by entering the personal identification number, which had beenregistered beforehand on the opposite end, and by exchanging data withthe opposite end.

[0008]FIG. 17 shows the conventional identification flow of anindividual. At first, the user makes a connection through the Internetwith the opposite end, then enters the numerical value foridentification (PIN) under the condition specified by the opposite end.The opposite end which has received the numerical value checks it withthe numerical value registered beforehand and confirms whether or notthey coincide. If they coincide here, the user is confirmed and becomescapable to obtain the desired reception.

[0009] As explained above, the following problems exist in theconventional identifying system using a portable telephone:

[0010] 1. Confirmation of individual is difficult. In the case where thepersonal identification number is leaked to another person, there is apossibility of an abuse.

[0011] 2. Confirmation of an individual is executed for eachcommunication with the opposite end, so that the communication costincreases and a reconfirmation becomes necessary if the phone call iscut during the conversation.

[0012] 3. Many keyboard operations.

SUMMARY OF THE INVENTION

[0013] The present invention provides a system for identifying anindividual, comprising: a means for reading the biological informationof a user by means of a sensor-incorporated display; a means forchecking the read biological information with the reference biologicalinformation; and a means for transmitting information to the destinationof communication that the checking has matched in the case where theyhave matched.

[0014] The present invention provides a system for identifying anindividual, comprising: a means for reading the biological informationof a user by means of a sensor-incorporated display; a means forchecking the read biological information with the reference biologicalinformation; a means for transmitting information to the destination ofcommunication that the checking has matched in the case where they havematched; and a means for notifying said user, after said destination ofcommunication receives information that said checking has matched, thatthe communication between said user and said destination ofcommunication has been authorized.

[0015] The present invention provides a system for identifying anindividual, which is provided with a portable communication devicehaving a sensor-incorporated display, comprising: a means for readingthe biological information of a user by means of saidsensor-incorporated display; a means for checking the read biologicalinformation with the reference biological information stored in saidportable communication device; and a means for transmitting informationto the destination of communication that the checking has matched in thecase where they have matched.

[0016] The present invention provides a system for identifying anindividual, which is provided with a portable communication devicehaving a sensor-incorporated display, comprising: a means for readingthe biological information of a user by means of a sensor-incorporateddisplay; a means for checking the read biological information with thereference biological information stored in said sensor-incorporateddisplay; a means for transmitting information to the destination ofcommunication that they have matched in the case where said checking hasmatched; and a means for transmitting information to said portablecommunication device, after the destination of communication receivesinformation that said checking has matched, that the communicationbetween said user and said destination of communication has beenauthorized.

[0017] The present invention provides a method for identifying anindividual, comprising: a means for reading the biological informationof a user by means of a sensor-incorporated display; a means forchecking the read biological information with the reference biologicalinformation; and a means for transmitting information to the destinationof communication that they have matched in the case where said checkinghas matched.

[0018] The present invention provides a method for identifying anindividual, comprising: a means for reading the biological informationof a user by means of a sensor-incorporated display; a means forchecking the read biological information with the reference biologicalinformation; a means for transmitting information to the destination ofcommunication that they have matched in the case where said checking hasmatched; and a means for notifying said user, after said destination ofcommunication receives information that said checking has matched, thatthe communication between said user and said destination ofcommunication has been authorized.

[0019] The present invention provides a method for identifying anindividual, which is provided with a portable communication devicehaving a sensor-incorporated display, comprising: a means for readingthe biological information of a user by means of saidsensor-incorporated display; a means for checking the read biologicalinformation with the reference biological information stored in saidportable communication device; and a means for transmitting informationto the destination of communication that they have matched in the casewhere said checking has matched.

[0020] The present invention provides a method for identifying anindividual, which is provided with a portable communication devicehaving a sensor-incorporated display, comprising: a means for readingthe biological information of a user by means of saidsensor-incorporated display; a means for checking the read biologicalinformation with the reference biological information stored in saidportable communication device; a means for transmitting information tothe destination of communication that they have matched in the casewhere said checking has matched; and a means for transmittinginformation to the portable communication device, after the destinationof communication receives information that said checking has matched,that the communication between said user and said destination ofcommunication has been authorized.

[0021] The portable communication device of this invention is possibleto identify an individual by means of the functions of the sensorincorporated in the device and has a possibility to have a highreliability and simplicity, compared with the conventionalidentification works consisting of entering a numerical value (personalidentification number).

BRIEF DESCRIPTION OF THE DRAWINGS

[0022]FIG. 1 is an identification flow of the system for identifying anindividual of this invention.

[0023]FIG. 2 is an external view of the portable communication device ofthis invention.

[0024]FIG. 3 is a drawing showing how to use the portable communicationdevice of this invention.

[0025]FIG. 4 is a drawing showing how to use the portable communicationdevice of this invention.

[0026]FIG. 5 is a block diagram showing the structure of thesensor-incorporated display.

[0027]FIG. 6 is a block diagram showing the structure of thesensor-incorporated display.

[0028]FIG. 7 is a circuit diagram of the sensor portion.

[0029]FIG. 8 is a circuit diagram of the pixel.

[0030]FIG. 9 is a circuit diagram of the sensor portion.

[0031]FIG. 10 is a block diagram showing the structure of thesensor-incorporated display.

[0032]FIGS. 11A to 11D are drawings showing the fabrication process ofthe sensor-incorporated display.

[0033]FIGS. 12A to 12C are drawings showing the fabrication process ofthe sensor-incorporated display.

[0034]FIGS. 13A to 13C are drawings showing the fabrication process ofthe sensor-incorporated display.

[0035]FIGS. 14A and 14B are an external view and a sectional view of thesensor-incorporated display, respectively.

[0036]FIGS. 15A and 15B are an external view and a sectional view of thesensor-incorporated display, respectively.

[0037]FIG. 16 is a drawing of a conventional portable telephone.

[0038]FIG. 17 is a flow of conventional identification of an individual.

[0039]FIG. 18 is a drawing showing the position of the palm pattern tobe read.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0040] In this invention, as an embodiment to resolve the problemsdescribed above, a biological information that a user has (a specificphysical information that the person has naturally such as finger printsor palm pattern), instead of personal identification number, is utilizedfor identification of an individual. And by doing the identificationprocess not on the opposite end, but by the portable communicationdevice itself, the simplicity as a system is increased.

[0041]FIG. 1 shows the identification flow of the system of identifyingan individual of this invention. At first, collection of biologicalinformation is instructed by means of a keyboard. If programmedbeforehand, it is easy to make it possible to start the collection ofbiological information by pushing only on one key. Furthermore, it isalso possible to set up to start automatically the collection ofbiological information when the portable communication device isswitched on.

[0042] The obtained biological information is compared with the person'sreference biological information, which is stored in the non-volatilememory of the portable communication device. If it is then judged thatthe read biological information coincides with the reference biologicalinformation, the user is judged as the legitimate owner of the portablecommunication device. The transmission to the opposite end is carriedout after finishing the judgement. At this time, the identificationprocess has already been finished, there is no need to effectuate againthe identification process on the opposite end, and the opposite endneeds only to receive information from the portable communication devicethat the identification has been finished.

[0043] What differentiates the portable communication device, which isused in the system for identifying an individual of the embodiment ofthe present invention, from conventional ones is that the display of thesystem for identifying in the embodiment of the present invention has abuilt-in sensor, while the display of conventional portable telephonesis dedicated to displaying. The sensor used here is an area sensor whichis utilized to read the biological information of a user. Biologicalinformation means physically inherent information that the user hasnaturally, such as a fingerprint or a palm pattern (the lines on thepalm).

[0044] Then, description is given of the portable communication deviceof this invention. FIG. 2 shows a portable communication of thisinvention with a display panel 2701 and an operation panel 2702. Thedisplay panel 2701 and the operation panel 2702 are connected at theconnecting part 2703. And at the connecting part 2703, the angle qbetween the surface on which is installed the sensor-incorporateddisplay 2704 (display with a built-in sensor) of display panel 2701 andthe surface on which is installed the operating keys 2706 of operationpanel 2702 is able to be changed to be any degrees.

[0045] The display panel 2701 has a sensor-incorporated display 2704.Furthermore, the portable communication device shown in FIG. 2 has afunction of a telephone, the display panel 2701 has a voice output part2705, and the voice is output from the voice output part 2705. For thesensor-incorporated display 2704, an EL display is used.

[0046] The operation panel 2702 has operating keys 2706, a power supplyswitch 2707 and a voice input part 2708. Furthermore, although in FIG. 2the operating keys 2706 and the power supply switch 2707 are providedseparately, a structure in which the power supply switch 2707 isincluded in the operating keys 2706 may be employed. Voice is input atthe voice input part 2708.

[0047] Furthermore, although in FIG. 2 the display panel 2701 has avoice output part 2705 and the operation panel 2702 has a voice inputpart 2708, this embodiment is not limited to this structure. It is alsopossible that the display panel 2701 has a voice input part 2708 and theoperation panel has a voice output part 2705. Furthermore, it is alsopossible that both the voice output part 2705 and the voice input part2708 are installed on the display panel 2701 or that both are installedon the operation panel 2702.

[0048] With reference to FIG. 3 and FIG. 4, how to use the portablecommunication device shown in FIG. 2 will be described. In case wherethe identification is executed by this device, it is used by posing thepalm on the portable communication device to cover it. Theidentification is executed by key operation on the keyboard, while thesensor-incorporated display reads the palm of a user and does theidentification process. Here, as the palm covers the portable device,the light used for sensing should be obtained from the interior of thedisplay. In consequence, a spontaneous light emitting display ispreferred such as an organic EL display. As shown in FIG. 18, the sensorreads the palm pattern (the lines on the palm).

[0049] Although, while FIG. 3 shows an example of operation of theoperating keys 2706 with the index finger, it is also possible tooperate the operating keys 2706 with the thumb as shown in FIG. 4.Furthermore, the operating keys 2706 can be installed on the sidesurface of operation panel 2702. The operation can be executed eitherwith the index finger or the thumb of one hand (the dominant hand).

[0050] The embodiments of this invention shall be described below.

Embodiment 1

[0051] In the following, the arrangement and action of the examples ofportable communication device having a sensor-incorporated display usedin this invention shall be described.

[0052]FIG. 5 is a block diagram of the portable communication device ofthis embodiment. This portable communication device is identical withconventional ones in having an antenna 601, a transmission and receptioncircuit 602, a signal processing circuit 603 to compress, expand andencode signals, a microcomputer 604 for control, a flash memory 605, akeyboard 606, a voice input circuit 607, voice output circuit 608, amicrophone 609, a speaker 610 and, in addition, this device further hasa sensor-incorporated display 611, a checking circuit part 612, etc.

[0053] When doing a check, the analog image information obtained by thesensor in the display is converted to digital signals by means of theA/D converter 613. The converted signals are sent to DSP (digital signalprocessor) 614 and signal processing is carried out. In the signalprocessing, to make the distinguishing of the lines on the palm easier,the portions of the image at which the shade change can be madeconspicuous by using a differential filter or the like. The data of thelines on the palm thus obtained are digitized inside DSP 614 and sent tothe comparison circuit 615. At the comparison circuit 615, the referencedata stored in flash memory 605 are also called and the two data arechecked by comparison.

[0054] As methods for distinguishing the biological information, thereis a method of checking the characteristics which compares and checksthe characteristics respectively and a method of image matching whichcompares directly two data. Either of these methods can be used withoutproblem. Furthermore, in stead of only one datum, several identificationdata, for example, by changing a little the direction of the hand, canbe provided to make the identification more precise.

[0055] If the matching is observed here, the microcomputer 604 forcontrol outputs an identification signal which is transmitted via signalprocessing part 603, transmission and reception circuit 602, and antenna601, and then delivered through the Internet, etc.

Embodiment 2

[0056]FIG. 6 is a block diagram showing the structure ofsensor-incorporated display used in this invention. 120 is a sourcesignal line drive circuit and 122 is a gate signal line drive circuit,both control the driving of the TFT 104 for switching and the TFT 105for driving EL. And 121 is a source signal line drive circuit for sensorand 123 is a gate signal line drive circuit for sensor, both control thedriving of the TFT 110 for reset, the TFT 111 for buffer and TFT 112 forselection. Furthermore, in this description, the source signal linedrive circuit 120, gate signal line drive circuit 122, source signalline drive circuit 121 for sensor, and gate signal line drive circuit123 for sensor are called driving parts.

[0057] The source signal line drive circuit 120 has a shift register 120a, a latch (A) 120 b and a latch (B) 120 c. At the source signal linedrive circuit 120, the clock signal (CLK) and the start pulse (SP) areentered to the shift register 120 a. The shift register 120 a generatestiming signals in turn according to these clock signals (CLK) and startsignals (SP) to provide in order the downstream circuits with timingsignals.

[0058] Furthermore, it is possible to provide the downstream circuitswith buffer amplified timing signals in order after having amplified thetiming signal from the shift register 120 a by a buffer (not shown) forexample. Because on the wires where the timing signals are providedthere are many circuits or elements connected, its load capacitance(parasitic capacitance) is large. The buffer is installed in order toavoid a “slow down” of rise up or rise down of the timing signals due tothis large load capacitance.

[0059] In FIG. 7 the circuit diagram of the sensor portion 101 is shown.The sensor portion 101 is provided with source signal lines S1 to Sx,power supply lines V1 to Vx, gate signal lines G1 to Gy, gate signallines RG1 to RGy for reset, gate signal lines SG1 to SGy for sensor,output wires SS1 to SSx for sensor and power supply line VB for sensor.

[0060] The sensor portion 101 has a plurality of pixels 102. The pixel102 has either one of source signal lines S1 to Sx, any one of powersupply lines V1 to Vx, either one of gate signal lines G1 to Gy, eitherone of gate signal lines RG1 to RGy for reset, either one of gate signallines SG1 to SGy for sensor, either one of sensor output wires SS1 toSSx and power supply line VB for sensor.

[0061] Each of the sensor output wires SS1 to SSx is connectedrespectively to the constant current sources 103_1 to 103_x.

[0062]FIG. 8 shows the detail structure of pixel 102. The areasurrounded by the dotted line shows a pixel 102. Furthermore, the sourcesignal line S means either one of source signal lines S1 to Sx. And thepower supply line V means either one of power supply lines V1 to Vx. Andthe gate signal line G means either one of gate signal lines G1 to Gy.And the gate signal line RG for reset means either one of gate signallines RG1 to RGy for reset. And the gate signal line SG for sensor meanseither one of gate signal lines SG1 to SGy for sensor. Then the sensoroutput wire SS means either one of sensor output wires SS1 to SSx.

[0063] The pixel 102 has a TFT 104 for switching, a TFT 105 for drivingEL and an EL element 106. Further in FIG. 8, while the pixel 102 isprovided with a condenser 107, the condenser 107 is not alwaysnecessary.

[0064] An EL element 106 is composed of an anode, a cathode and an ELlayer provided between the anode and the cathode. When the anode isconnected with the source region or the drain region of the TFT 105 fordriving EL, the anode is the pixel electrode and the cathode is theopposite electrode. On the contrary, if the cathode is connected withthe source region or the drain region of the TFT 105 for driving EL, theanode will be the opposite electrode and the cathode will be the pixelelectrode.

[0065] The gate electrode of the TFT 104 for switching is connected withthe gate signal line G. And of the source region and the drain region ofthe TFT 104 for switching, one is connected with the source signal lineS and the other with the gate electrode of the TFT 105 for driving EL.

[0066] Of the source region and the drain region of the TFT for drivingEL, one is connected with the power supply line V and the other with theEL element 106. The condenser 107 is installed connected with the gateelectrode of the TFT 105 for driving EL and the power supply line V.

[0067] Furthermore, the pixel 102 has a TFT 101 for reset, a TFT 111 forbuffer, a TFT 112 for selection and a photodiode 113.

[0068] The gate electrode of the TFT 110 for reset is connected with thegate signal line RG for reset. The source region of the TFT 110 forreset is connected with the power supply line VB for sensor. The powersupply line VB for sensor is always maintained to a constant potential(the reference potential). Further the drain region of the TFT 110 forreset is connected with the photodiode 113 and the gate electrode of theTFT 111 for buffer.

[0069] It is not illustrated, but the photodiode has a cathode, ananode, and a photoelectric conversion layer provided between the cathodeand the anode. The drain region of the TFT 110 for reset is connected inpractice with the anode or cathode of photodiode 113.

[0070] The drain region of the TFT 111 for buffer is connected with thepower supply line VB for sensor and maintained at a constant referencepotential. And the source region of the TFT 111 for buffer is connectedwith the source region or drain region of the TFT 112 for selection.

[0071] The gate electrode of the TFT 112 for selection is connected withthe gate signal line SG for sensor. And of the source region and thedrain region of the TFT 112 for selection, one is connected asabove-mentioned to the source region of the TFT 111 for buffer and theother to the sensor output wire SS. The sensor output wire SS isconnected with the constant current source 103 (any one of constantcurrent source 103_1 to 103_x) and always a constant current flows init.

[0072] The timing signals from the shift register 120 a shown in FIG. 6are supplied to the latch (A) 120 b. The latch (A) 120 b has latches ata plurality of stages to process digital signals. The latch (A) 120 bwrites and holds in order the digital signals at the same time as saidtiming signals are entered.

[0073] Furthermore, when digital signals are taken into the latch (A)120 b, the digital signals can be subsequently input into the latches ata plurality of stages that the latch (A) 120 b has. But this inventionof application is not limited to this composition. The latches at aplurality of stages that the latch (A) 120 b has can be sorted intoseveral groups and the so-called divided driving can be executed byentering digital signals at the same time to each of the groups inparallel. Furthermore, the number of groups in this case is called thedivision number. For example, when the latches are sorted into groupswith 4 stages each, it is driven divided by four divisions.

[0074] The time to finish the writing of digital signals to the latchesof all stages of latch (A) 120 b is called the line period. That is tosay, the line period is the time interval, from the time when thewriting of digital signal starts at the latch of the most left sidestage in the latch (A) 120 b, to the time when the writing of digitalsignals finishes at the latch of the stage the far right side. Inpractice, the line period can contain the horizontal retrace line periodin addition to said line period.

[0075] When the line period is finished, a Latch Signal is supplied tothe latch (B) 120 c. At this moment, the digital signals written andheld in the latch (A) 120 b are transmitted at once to the latch (B) 120c all together, and written and held in the latches of all stages of thelatch (B) 120 c.

[0076] The latch (A) 120 b which has finished to transmit digitalsignals to the latch (B) 120 c executes again the writing of digitalsignals in order according to the timing signals from the shift register120 a.

[0077] During this 1 line period of the second cycle, the digitalsignals, which are written and held in the latch (B) 120 b, are enteredto the source signal lines S1-Sx.

[0078] On the other hand, each of the drive circuits 122 of the gatesignal side has a shift register and a buffer (non of these areillustrated). But as the case may be, the drive circuits 122 of the gatesignal side can have a level shift in addition to the shift register andbuffer.

[0079] At the drive circuits 122 on gate signal side, gate signals fromthe shift register (not shown) are supplied to the buffer (not shown),then to the corresponding gate signal line. To each of the gate signallines G1 to Gy, a gate electrode of TFT 104 for switching pixels for 1line is connected and, as all the TFT 104 for switching the pixels for 1line should be on at the same time, a buffer which permits a big currentflow is used.

[0080] Furthermore, the number, composition and actions of the sourcesignal line drive circuits and of the gate signal line drive circuitsare not limited to the composition of this embodiment. The area sensorused in the sensor-incorporated display of the invention is able to usewell-known source signal line drive circuits and gate signal line drivecircuits.

[0081] The composition of this embodiment can be executed in anycombination with the embodiment 1.

Embodiment 3

[0082] A circuit diagram of the sensor portion with differentcomposition from the sensor portion of the embodiment 2 is shown in FIG.9. The sensor portion 1001 is provided with the source signal lines S1to Sx, power supply lines V1 to Vx, gate signal lines G1 to Gy, gatesignal lines RG1 to RGy for reset, sensor output wires SS1 to SSx andpower supply line VB for sensor.

[0083] The sensor portion 1001 has a plurality of pixels 1002. The pixel1002 has either one of source signal lines S1 to Sx, either one of powersupply lines V1 to Vx, either one of gate signal lines G1 to Gy, eitherone of gate signal lines RG1 to RGy for reset, either one of sensoroutput wires SS1 to SSx and the power supply line VB for sensor.

[0084] Each of the sensor output wires SS1 to SSx is connected with theconstant current source 1003_1 to 1003_x respectively.

[0085] The pixel 1002 has a TFT 1004 for switching, a TFT 1005 fordriving EL and an EL element 1006. Further in FIG. 9 the pixel 1002 isprovided with a condenser 1007, but the condenser 1007 is not alwaysrequired. Furthermore, the pixel 1002 has a TFT 1010 for reset, a TFT1011 for buffer, a TFT 1012 for selection and a photodiode 1013.

[0086] The EL element 1006 is composed of an anode, a cathode, and an ELlayer provided between the anode and the cathode. When the anode isconnected with the source region or drain region of the TFT 1005 fordriving EL, the anode is the pixel electrode and the cathode is theopposite electrode. On the contrary, if the cathode is connected withthe source region or drain region of the TFT 1005 for driving EL, theanode will be the opposite electrode and the cathode the pixelelectrode.

[0087] The TFT 1004 for switching is connected with the gate signallines (G1 to Gy). And of the source region and the drain region of theTFT 1004 for switching, one is connected with the source signal line Sand the other with the gate electrode of the TFT 1005 for driving EL.

[0088] Of the source region and the drain region of the TFT 1005 fordriving EL, one is connected with the power supply lines (V1 to Vx) andthe other is connected with the EL element 1006. The condenser 1007 isconnected with the gate electrode of TFT 1005 for driving EL and withthe power supply lines (V1 to Vx).

[0089] The gate electrode of the TFT 1010 for reset is connected withthe gate signal lines (RG1 to RGx) for reset. The source region of TFT1010 for reset is connected with the power supply line VB for sensor.The power supply line VB for sensor is always maintained at a constantpotential (the reference potential). Further the drain region of TFT1010 for reset is connected with the photodiode 1013 and with the gateelectrode of TFT 1011 for buffer.

[0090] Though it is not illustrated in the figure, the photodiode 1013has a cathode, an anode, and a photoelectric conversion layer providedbetween the cathode and the anode. The drain region of TFT 1010 forreset is connected in practice with the cathode or anode of photodiode1013.

[0091] The drain region of TFT 1011 for buffer is connected with thepower supply line VB for sensor and maintained always at the constantreference potential. And the source region of TFT 1011 for buffer isconnected with the source region or drain region of TFT 1012 forselection.

[0092] The gate electrode of TFT 1012 for selection is connected withthe gate signal lines (G1 to Gx). And of the source region and the drainregion of TFT 1012 for selection, one is connected as above-mentioned tothe source region of TFT 1011 for buffer and the other is connected tothe sensor output wires (SS1 to SSx). Each of the sensor output wires(SS1 to SSx) is connected with the constant current source 1003(constant current source 1003_1 to 1003_x) and always a constant currentflows.

[0093] In this embodiment, the TFT 1004 for switching and the TFT 1012for selection have identical polarity. That is to say, when the TFT 1004for switching is a TFT of n-channel type, the TFT 1012 for selection isa TFT of n-channel type also. And if the TFT 1004 for switching is a TFTof p-channel type, the TFT 1012 for selection is a TFT of p-channel typealso.

[0094] Furthermore, the sensor portion of area sensor of this embodimentis different from the area sensor illustrated in FIG. 7, but the gateelectrode of TFT 1004 for switching and the gate electrode of TFT 1012for selection are both connected with the gate signal lines (G1 to Gx).Consequently, in case of the area sensor of this embodiment, the lightemission period of EL element 1006 contained in each pixel is the samelength as the sampling period (ST1 to STn). By the compositionabove-mentioned, the area sensor of this embodiment can have less numberof lines compared with that of FIG. 7.

[0095] Furthermore, the area sensor of this embodiment, is also able todisplay an image on its sensor portion 1001.

[0096] The composition of this embodiment can be effectuated with anycombination with the embodiment 1 or the embodiment 2.

Embodiment 4

[0097] The top view of the area sensor of this embodiment is shown inFIG. 10. 130 denotes the source signal line drive circuit and 132denotes the gate signal line drive circuit. Then, 131 denotes the sourcesignal line drive circuit for sensor and 133 denotes the gate signalline drive circuit for sensor. In this embodiment, each one of thesource signal line drive circuits and the gate signal line drivecircuits are provided, but this invention for application is not limitedto this composition. Two source signal line drive circuits can beprovided. Furthermore, Two gate signal line drive circuits can be alsoprovided.

[0098] Further in this description, the source signal line drive circuit130, gate signal line drive circuit 132, source signal line drivecircuit 131 for sensor, and gate signal line drive circuit 133 forsensor are called the driving part.

[0099] The source signal line drive circuit 130 has a shift register 130a, a level shift 130 b and a sampling circuit 130 c. Furthermore, thelevel shift is used only when it is needed and is not always required.Furthermore, in this embodiment the level shift is installed between theshift register 130 a and the sampling circuit 130 c, but this inventionfor application is not limited to this composition. So, it can be of thecomposition where the level shift 130 b is installed in the shiftregister 130 a.

[0100] The clock signal (CLK) and the start pulse signal (SP) areentered into the shift register 130 a. From shift register 130 a, thesampling signal is output in order to sample the analogue signal (analogsignal). The output sampling signal is entered into the level shift 130b and then output with it's potential of bigger amplitude.

[0101] The sampling signal sent from the level shift 130 b is enteredinto the sampling circuit 130 c. Then the analog signals entering intothe sampling circuit 130 c are sampled respectively by sampling signalsand entered into the source signal lines S1 to Sx.

[0102] On the other hand, the drive circuits 132 on the gate signal sidehave each a shift register and a buffer (none of them are illustrated).Depending on the case, the drive circuit 132 on the gate signal side canhave a level shift in addition to the shift register and the buffer.

[0103] At the drive circuits 132 on gate signal side, the gate signalsfrom the shift register (not illustrated) is supplied to the buffer (notillustrated), then to the corresponding gate signal line. To each of thegate signal lines G1 to Gy a gate electrode of TFT 104 for switchingpixels for 1 line is connected, and as all the TFT 104 for switching thepixels for 1 line should be ON at the same time, a buffer which permitsa big current flow is used.

[0104] Furthermore, the number, composition and actions of the sourcesignal line drive circuits and of the gate signal line drive circuitsare not limited to the composition of this embodiment. The area sensorused in the sensor-incorporated display of the invention permits the useof well-known source signal line drive circuits and gate signal linedrive circuits.

[0105] Further in this embodiment, the sensor portion 101 can be of thecomposition shown in FIG. 7 or FIG. 9.

[0106] This embodiment can be used in any combination with theembodiment 1 or the embodiment 3.

Embodiment 5

[0107] In this embodiment, a production method of the TFT of the sensorportion on the substrate will be described in details.

[0108] At first, as shown in FIG. 11A, on the substrate 700 composed ofthe glass, such as barium boro-silicated glass, typically #7059 glass or#1737 glass of Coning Co. Ltd., or aluminum boro-silicated glass, isformed a primary film 701 composed of an insulating film, such assilicon oxide film, silicon nitride film or silicon oxide nitride film.For example, a silicon oxide nitride film 701 a fabricated from SiH₄,NH₃ and N₂O by plasma CVD method is formed for 10 to 200 nm (preferably50 to 100 nm), and a silicon oxide nitride hydride film 701 b fabricatedin the same way from SiH₄ and N₂O is formed by laminating in a thicknessof 50 to 200 nm (preferably 100 to 150 nm). In this embodiment theprimary film 701 is shown in a double layer structure, but it can beformed in a structure with a single layer film or multiple layers of theabove-mentioned insulating films.

[0109] The semiconductor islands 702 to 707 are formed with crystallinesemiconductor films of which semiconductor film having an amorphousstructure is fabricated by the laser crystallization method or awell-known thermal crystallization method. The thickness of thesemiconductor islands 702 to 707 is formed at 25 to 80 nm (preferably 30to 60 nm). There is no restriction on the material used for thecrystalline semiconductor films, but they are preferably formed withsilicon or silicon-germanium (SiGe) alloy.

[0110] When the crystalline semiconductor film is fabricated by thelaser crystallization method, the excimer laser, YAG laser or YVO₄ laserof pulse oscillation type or continuous emission type. When these lasersare used, it is preferable to use a method consisting of condensing inlinear form the laser light radiated from the laser oscillator andirradiating them on the semiconductor film by optical system. Thecondition of crystallization is normally chosen as appropriate by theperson who performs, but when the excimer laser is used, the pulseoscillatory frequency should be of 30 Hz and the laser energy density of100 to 400 mJ/cm² (typically of 200 to 300 mJ/cm²). If YAG laser isused, the second higher harmonics should be used with the pulseoscillatory frequency of 1 to 10 kHz, and preferably with the laserenergy density of 300 to 600 mJ/cm² (typically of 350 to 500 mJ/cm²).Then the laser light condensed in linear form of a width of 100 to 1000μm, for example, of 400 μm is irradiated over the total surface of thesubstrate, with an overlap rate at this time of the linear laser lightof 80 to 98%.

[0111] Then, a gate insulating film 708 covering the semiconductorislands 702 to 707 is formed. The gate insulating film 708 is formed bythe plasma CVD method or sputtering method in a film of a thickness of40 to 150 nm containing silicon. In this embodiment, it is formed in asilicon oxide nitride film of a thickness of 120 nm. Of course, the gateinsulating film 708 is not limited to the silicon oxide nitride film assuch, but other silicon-containing insulating film can be used in asingle layer or multi-layer structure. For example, when a silicon oxidefilm is used, it can be formed by mixing TEOS (Tetraethyl Orthosilicate)and O₂ by the plasma CVD method and electrically discharged with thereaction pressure of 40 Pa, at a substrate temperature of 300 to 400°C., and with a high frequency (13.56 MHz) electric power density of 0.5to 0.8 W/cm². With a silicon oxide film fabricated like this, goodcharacteristics as a gate insulating film can be obtained by asubsequent thermal anneal at 400 to 500° C.

[0112] Then, the first conductive film 709 a and second conductive film709 b are formed to form a gate electrode on the gate insulating film708. In this embodiment, the first conductive film 709 a is formed withTa in a thickness of 50 to 100 nm and the second conductive film 709 bwith W in a thickness of 100 to 300 nm.

[0113] The Ta film is formed by the sputtering method, sputtering thetarget of Ta by Ar. In this case, if an appropriate quantity of Xe or Kris added to Ar, the inner stress of Ta film is relieved to prevent thefilm from peeling. Furthermore the resistibility of the Ta film of αphase is approximately 20 μW and usable for an gate electrode, but theresistibility of the Ta film of β phase is approximately 180 μWcm andnot suitable for a gate electrode. In order to form a Ta film of αphase, it can be easily formed if tantalum nitride, which has a crystalstructure close to α phase of Ta, is in advance formed as a base for Tain a thickness of approximately 10 to 50 nm.

[0114] When W film is formed, it is formed by the sputtering method withW as target. Otherwise, it can be formed also by a thermal CVD methodusing tungsten hexafluoride (WF₆). In any way, it is necessary to lowerthe resistibility to be used as a gate electrode, preferably to lessthan 20 μWcm for the resistibility of W film. The resistibility of Wfilm can be lowered by having greater crystal grains, but if there aremany impure elements like oxygen in the W, the crystallization could beprevented to increase the resistibility. For this reason, when thesputtering method is used, a W target of purity 99.9999% is used andsufficient precaution is taken to avoid the mixture of impurities fromthe gaseous phase during the film formation in order that aresistibility of 9 to 20 μWcm can be realized.

[0115] Furthermore, in this embodiment the first conductive film 709 ais made with Ta and the second conductive film 7096 with W, but they arenot restrictive, either of them being able to be formed with an elementchosen from Ta, W, Ti, Mo, Al and Cu. or with an alloy material orcompound material of which the main component is one of said elements.Furthermore, one can use a semiconductor film typically represented bypolycrystal silicon film after doping the impure elements such asphosphorus. The examples of preferable combinations, other than thisembodiment, are forming the first conductive film 709 a with tantalumnitride (TaN) and the second conductive film 709 b with W, forming thefirst conductive film 709 a with tantalum nitride (TaN) and the secondconductive film 709 b with Al, and forming the first conductive film 709a with tantalum nitride (TaN) and the second conductive film 709 b withCu.

[0116] Then, the masks 710 to 715 are formed by a resist and an etchingtreatment is carried out in order to form the electrodes and the wires.In this embodiment, ICP (Inductively Coupled Plasma) etching method isused, in which CF₄ and Cl₂ are mixed to the etching gas and RF (13.56MHz) electric power of 500 W is supplied to the coil type electrode at apressure of 1 Pa to generate plasma. To the substrate side (samplestage) also, the RF (13.56 MHz) electric power of 100 W is supplied toapply significantly a negative self-bias voltage. If CF₄ and Cl₂ aremixed, W film and Ta film are both etched to almost the same extent.

[0117] Under the above-mentioned condition of etching, by making theform of the masks appropriate by means of the resist and by the effectof the bias voltage applied to the substrate side, the edge shape of thefirst conductive layer and second conductive layer become tapered. Theangles of the tapered parts are 15 to 45°. In order to etch withoutleaving residuals on the gate insulating film, it is preferable toincrease etching time by around 10 to 20%. Because the selectivity ofthe silicon oxide nitride film against the W film is 2 to 4 (typically3), the surfaces where silicon oxide nitride film is exposed will beetched to around 20 to 50 nm by an over-etching treatment. In this way,by means of the first etching treatment, the conductive layers 719 to724 of the first shape composed of the first conductive layer and thesecond conductive layer are formed (the first layers 719 a to 724 a andthe second layers 719 b to 724 b). 718 denotes an insulating film, andthe region which is not covered by the first shaped conductive layers719 to 724 is etched up to around 20 to 50 nm to form a thin region.(FIG. 11B)

[0118] Then, the first doping treatment is carried out and an impureelement is added to give an n-type. (FIG. 11C) The doping can be carriedout by an ion doping method or ion implantation method. The ion dopingmethod is carried out under condition of the dose of 1×10¹³ to 5×10¹⁴atoms/cm², with the accelerating voltage of 60 to 100 keV. For theimpure element, which gives n-type, the elements of 15 group, typicallythe phosphorus (P) or the arsenic (As), are used, and the phosphorus (P)is used here. In this case, The conductive layers 719 to 724 become amask against the impure element which gives n-type and impurity regions726 to 731 are formed in a self-matching way. To the first impurityregions 726 to 731, the impure element is added at the concentrationbetween 1×10²⁰ to 1×10²¹ atoms/cm³ to give n-type.

[0119] Then, the second etching treatment is carried out as shown inFIG. 11D. Likewise, the ICP etching method is used, in which CF₄, Cl₂and O₂ are mixed to the etching gas and RF electric power (13.56 MHz) of500 W is supplied to the coil type electrode at a pressure of 1 Pa togenerate plasma. To the substrate side (sample stage), RF (13.56 KHz)electric power of 50 W is input to apply a self-bias voltage lower thanthe first etching treatment. By these conditions the W film is etchedanisotropically and then the first conductive layer Ta is etchedanisotropically in a lower etching speed in order to form the secondshaped conductive layers 733 to 738 (the first conductive layers 733 ato 738 a and the second conductive layers 733 b to 738 b). 732 denotes agate insulating film, the region which is not covered by the secondshaped conductive layers 733 to 738 is etched further up to around 20 to50 nm and forms a thin region.

[0120] The etching reaction of the W film and the Ta film by the mixedgas of CF₄ and Cl₂ can be supposed by the radicals or ionic speciesgenerated and the vapor pressure of reaction products. When the vaporpressures of fluoride and chloride of W and Ta are compared, WF₆ whichis a fluoride of W is extremely important and other WCl₅, TaF₅ and TaCl₅are almost the same. Accordingly, both the W film and Ta film are etchedby the mixed gas of CF₄ and Cl₂. However, if an appropriate quantity ofO₂ is added to this mixed gas, CF₄ and O₂ react to become CO and F, anda large quantity of F radical and F ion are generated. As a result ofthis, the etching speed of W film with higher vapor pressure of fluorideincreases. On the other hand, for Ta there is relatively less increaseof etching speed by the increase of F. Furthermore, as Ta is easilyoxidized, the surface of Ta is oxidized by the addition of O₂. As theoxides of Ta do not react with the fluorine or the chlorine, the etchingspeed of Ta film decreases further. In consequence, it becomes possibleto differentiate the etching speed of W film and Ta film in order tohave the etching speed of W film greater than that of Ta film.

[0121] Then, the second doping treatment is executed as shown in FIG.12A. In this case, with the conditions of less dose and higheraccelerating voltage than the first doping treatment, the impure elementgiving the n-type is doped. For example, executing with the acceleratingvoltage of 70 to 120 keV and the dose of 1×10¹³/cm², new impurity regionis formed in the interior of the first impurity region formed on thesemiconductor islands as shown in FIG. 11C. The doping will beeffectuate, by using as masks the second shaped conductive layers 733 to738, so as to the impure element to be added also to the region underthe second conductive layers 733 a to 738 a. Of this way, the thirdimpurity regions 739 to 744, which overlap the second conductive layers733 a to 738 a, and the second impurity regions 746 to 751 between thefirst impurity regions and the third impurity regions. The impureelement which gives the n-type will be determined for the concentrationto be 1×10¹⁷ to 1×10¹⁹ atoms/cm³ in the second impurity regions and1×10¹⁶ to 1×10¹⁸ atoms/cm³ in the third impurity regions.

[0122] Then, as shown in FIG. 12B, at the semiconductor islands 704 and707 which form TFT of p-channel type, the fourth impurity regions 755 to757 are formed with the conductive type contrary to the negativeconductive type. By using as masks against the impure elements, thesecond conductive layers 735 b and 738 b, the impurity regions areformed in a self-matching manner. At this moment, all the surface of thesemiconductor islands 702, 703 and 706 and a part of 705, which form TFTof n-channel type, should be in advance covered by the resist masks 752to 754. Although the impurity regions 755 a to 755 c, 756 a to 756 c,and 757 a to 757 c are added of phosphorus with differentconcentrations, they are formed by the ion doping method using thediborane (B₂H₆), the impurity concentration of all the regions being2×10²⁰ to 2×10²¹ atoms/cm³.

[0123] By the above-mentioned processes the impurity region is formed ineach semiconductor island. The second conductive layers 733 to 738,which overlaps the semiconductor islands, work as the electrodes.

[0124] After having eliminated the resist masks 752 to 754, a process ofactivation of the impure element added to each semiconductor islandshould be executed for the aim of controlling the conductive type asshown in FIG. 12C. This step is carried out by a thermal annealingmethod by means of an annealing furnace. Otherwise, a laser annealingmethod or a rapid thermal annealing (RTA) method can be applied. Thethermal annealing method is normally carried out in the nitrogenatmosphere of oxygen concentration of less than 1 ppm, preferably ofless than 0.1 ppm and at a temperature of 400 to 700° C., typically at500 to 600° C., and in this embodiment it is carried out at 500° C.during 4 hours. However, If the wiring material utilized for 733 to 738is weak to the heat, it is preferred to execute the activation afterhaving formed interlayer insulating film (with silicon as the maincomponent) in order to protect the wires, etc.

[0125] Furthermore, in the atmosphere containing 3 to 100% of hydrogen,a heat treatment is carried out at 300 to 450° C. during 1 to 12 hoursas a step of hydrogenation of the semiconductor islands. This step is astep to terminate the dangling bond of semiconductor layers by means ofthe thermally excited hydrogen. As an another means of hydrogenation,the plasma hydrogenation (which uses the hydrogen excited by plasma) canbe carried out.

[0126] Next, the first interlayer insulating film 760 is formed in athickness of 100 to 200 nm from the silicon oxide nitride film. On thisfilm, the second interlayer insulating film 761 is formed consisting oforganic insulating material. Then, an etching step is executed in orderto form contact holes.

[0127] Then, the source wires 762 to 767, which form a contact with thesource region of semiconductor islands, the drain wires 768 to 773,which form a contact with the drain region, are formed. Not shown in thefigure, in this embodiment this electrode is used as an electrode of3-layer structure formed continuously by a sputtering method a Ti filmof 100 nm, an Al film containing Ti of 300 nm and a Ti film of 150 nm(FIG. 13A).

[0128] Then, the passivation film 774 is formed so as to cover thesource wires 762 to 767, the drain wires 768 to 773 and the secondinterlayer insulating film 761. The passivation film 774 is formed of asilicon nitride film at a thickness of 50 nm. Furthermore, the thirdinterlayer insulating film 775 consisting of an organic resin is formedin thickness around of 1000 nm. For the organic resin film, polyimide,acrylic, polyimide-amide, etc. can be used. The advantages of using anorganic resin film, that the formation of it is easy, the parasiticcapacitance can be decreased because the relative permittivity is low,and the excellent planarization, etc. can be mentioned. Furthermore,other organic resin film than those mentioned above also can be used.Here, after applied to the substrate, a type of polyimide, whichthermally polymerize, is used to form it by burning at 300° C.

[0129] Then, the contact holes are formed to reach the drain wires 773and 771 on the third interlayer insulating film 775 and the passivationfilm 774, and the pixel electrode 776 and the wire for sensor 777 areformed. In this embodiment, a indium-tin oxide (ITO) film is formed at athickness of 110 m, and the wire for sensor 777 and the pixel electrode776 are formed at the same time by patterning. Furthermore, atransparent conductive film by mixing 2 to 20% of zinc oxide to theindium oxide can also be used. This pixel electrode 776 will be theanode of EL element (FIG. 13B).

[0130] Then, the bank 778 is formed of a resin material. The bank 778can be formed by patterning of acrylic film or polyimide film of athickness 1 to 2 μm. This bank 778 is formed between the pixels in aform of stripe. In this embodiment, the bank 778 is formed along on thesource wire 776 but it can be also formed along on the gate wire (notillustrated). Furthermore, the material forming the bank 778 can bemixed with a pigment or the like to use it as a shield film.

[0131] Also, at the same time as the bank 778 is formed, on the contacthole of pixel electrode 776 reaching to the drain wire 773, aplanarization part can be formed to make plane the EL layer which isformed on the pixel electrode 776.

[0132] Then, the EL layer 779 and cathode (MgAg electrode) 780 areformed successively by the vacuum evaporation method without atmosphericrelease. Furthermore, the film thickness of EL layer 779 can be of 80 to200 nm (typically of 100 to 120 nm) and the thickness of cathode 780 canbe of 180 to 300 nm (typically of 200 to 250 nm). Furthermore, whileonly one pixel is illustrated in this embodiment, the EL layer emittingred color, the EL layer emitting green color and the EL layer emittingblue color are also formed simultaneously.

[0133] In this process, the EL layers 779 and the cathodes 780 areformed successively for the pixel corresponding to red color, the pixelcorresponding to green color and the pixel corresponding to blue color.However, as the EL layer 779 is not so resistant to solution, each colormust be formed separately without using the photolitography technology.This is preferably carried out by hiding all other pixels except thedesired one by means of a metal mask in order to form selectively the ELlayer 779 and the cathode 780 only for the required part.

[0134] That is to say, firstly a mask is set to hide all the pixelsexcept the pixel corresponding to red color and selectively the redcolor emitting EL layer and cathode are formed by means of this mask.Then a mask is set to hide all the pixels except the pixel correspondingto green color and selectively the green color emitting EL layer andcathode are formed by means of this mask. Then in the same manner, amask is set to hide all the pixels except the pixel corresponding toblue color and selectively the blue color emitting EL layer and cathodeare formed by means of this mask. Furthermore, in this example it isexplained to use different masks for different colors, but only one maskcan be used for different colors. Furthermore, it is preferable tocontinue the treatment to form the EL layer and cathode for all pixelswithout disrupting the vacuum.

[0135] Furthermore, while in this embodiment the EL layer 779 has asingle layer structure consisting only of a light emission layer, butthe EL layer may have also a hole transport layer, a hole injectionlayer, an electron transport layer, an electron injection layer, etc. Inthis way, there have already been reported various combinations and anyof these can be used. For EL layer 779 well known materials can be used.As the well-known materials, an organic material is suitable in takingaccount of the EL-drive voltage. Furthermore, while in this embodiment aMgAg electrode is used for the cathode of EL element, but otherwell-known materials can be used as well.

[0136] In this way, a sensor substrate of the structure shown in FIG.13C can be achieved. Furthermore, it is effective to continuouslyexecute processes of forming the bank 778 and cathode 780 by using athin film forming device of the multi-chamber system (or in-line system)without atmospheric release.

[0137] Furthermore, in this embodiment, the processes of fabrication ofTFTs contained in the sensor portions are explained, but the TFTscontained in the driving parts also can be formed on the substrate atthe same time with reference to the above-mentioned process.

[0138]781 denotes the TFT for buffer, 782 denotes the TFT for selection,783 denotes the TFT for reset, 784 denotes the photodiode, 785 denotesthe TFT for switching and 786 denotes the TFT for driving.

[0139] Though in this embodiment the TFT 785 for switching is made in asingle gate structure, it can be a double gate structure, triple gatestructure, or a multi-gate structure having more than three gates. Bymaking the TFT 785 for switching have the double gate structure, itbecomes a structure having in practice two TFTs connected in series andhas an advantage to permit to reduce the off-current.

[0140] Then in this embodiment, the gate electrode 736, which isinstalled on the photodiode 784, is maintained at a potential at whichthere is no current flow through the photoelectric conversion layer 789which is provided between the cathode 787 and the anode 788.

[0141] In this embodiment, TFT 781 for buffer, TFT 782 for selection,TFT 785 for switching are the TFT of n-channel type, and each one ofthem has the channel forming regions 801 to 803, the third impurityregions 804 to 806 (Lov region) overlapping the first gate electrodes733 a, 734 a and 737 a, the second impurity regions 807 to 809 (Loffregion) formed on the outside of the first gate electrodes 733 a, 734 aand 737 a, and the first impurity regions 810 to 812 functioning assource region or drain region.

[0142] Further in this embodiment, TFT 783 for reset and TFT 786 fordriving EL are the TFT of p-channel, and each TFT has the channelforming regions 813 and 184, the fourth impurity regions 815 and 816overlapping the first gate electrodes 735 a and 738 a, the fifthimpurity regions 817 and 818 formed on the outside of the first gateelectrodes 735 a and 738 a, and the sixth impurity regions 819 and 820functioning as source region or drain region.

[0143] In fact, when achieved up to FIG. 13C, it is preferable toprotect them from the open air by means of a packaging (encapsulation)with a highly air tight and less degassing protective film (laminatefilm, ultraviolet curing resin film, etc.) or a transparent sealingmaterial. At this time, one can increase the reliability of EL elementsby making the inside of the sealing material filled with inertatmosphere or by arranging a hygroscopic substance (for example, bariumoxide) in the inside.

[0144] Furthermore, when the air tightness becomes higher by a process,for example, of packaging, connectors (flexible print circuit: FPC) toconnect the terminals, which are drawn from the elements and circuitsformed on the substrate, with the external signal terminals installed toachieve it as a final product. In this specification, a product readyfor delivery like this shall be called an area sensor.

[0145] Furthermore, this invention is not limited to the above-mentionedmethod of fabrication and it is possible to fabricate by a well-knownmethod. Furthermore, this embodiment can be effectuated in anycombination with embodiments 1 through 4.

Embodiment 6

[0146] This embodiment is to describe the situations in which thisinvention is used. If the identification of an individual does notrequire such a high degree of identification such as a biologicalinformation, it is possible to not use this invention. In the case oftransferring a small amount of money, for example, this is notnecessarily required.

[0147] For this reason, there is a possibility to choose whether theidentification is necessary or not and to set up to make theidentification selectively, for example, only for the cases where thetransfer of a large amount of money is involved. It is also possible touse it according to the situations of clients, or to set up in advancethe criteria for judgement on the control microcomputer of portablecommunication device and use it only in the cases where the numericvalue is more than a certain value.

[0148] Furthermore, it is possible to transmit through the Internet theidentification result only when the identification result is required.

[0149] Furthermore, this embodiment can be effectuated in anycombination with embodiments 1 through 5.

Embodiment 7

[0150] This embodiment describes an example of fabrication of EL(electro-luminescence) display (area sensor) which is used for thesensor-incorporated display of this invention. Furthermore, FIG. 14A isa top view of the EL display of this invention and FIG. 14B is thesectional view.

[0151] In FIGS. 14A and 14B, 4001 is a substrate, 4002 a pixel part,4003 a drive circuit on the source side, 4004 a drive circuit of gateside, with each drive circuit going through the wire 4005 to FPC(flexible print circuit) 4006, where they are connected with externalequipment.

[0152] At this moment, The first sealing material 4101, the coveringmaterial 4102, the loading material 4103 and the second sealing material4104 are installed so as to surround the pixel part 4002, the drivecircuit on the source side 4003 and the drive circuit on the gate side4004.

[0153]FIG. 14B is the sectional view of the FIG. 14A cut at A-A′, inwhich a photodiode 4201 as well as a TFT for driving EL (TFT to controlthe current to the EL element) contained in the pixel part are formed onthe substrate 4001.

[0154] For the TFT 4202 for driving EL, a P-channel type TFT that isfabricated by a well-known method is used. And to the pixel part 4002, aholding capacitance (not illustrated) connected to the gate of TFT 4202for driving EL is installed.

[0155] On the photodiode 4201 and the TFT 4202 for driving EL, aninterlayer insulating film (planarization film) 4301 is formed and thena pixel electrode (anode) 4302 is formed on it in order to connectelectrically with the drain of TFT 4202 for driving EL. For the pixelelectrode 4302, a transparent conductive film with a high work functionshould be used. For the transparent conductive film, the compound ofindium oxide and tin oxide, a compound of indium oxide and zinc oxide,zinc oxide, tin oxide, or indium oxide can be used. Furthermore, theabove-mentioned transparent film to which gallium is added can also beused.

[0156] Then, the insulating film 4303 is formed on the pixel electrode4302 and in this insulating film 4303 an opening is formed on the pixelelectrode 4302. At this opening, the EL (electro-luminescence) layer4304 is formed on the pixel electrode 4302. The EL layer 4304 can bemade with a well known organic EL material or inorganic EL material.Furthermore, for the organic EL material, while there are low-molecularseries (monomer series) materials and high-molecular series (polymerseries) materials. both of them can be used.

[0157] For the fabrication method of EL layer 4304, a well-known vaporevaporation technique or method of application technique can be used.And for the structure of the EL layer, the hole injection layer, thehole transport layer, the light emission layer, the electron transportlayer or the electron injection layer can be used in any combination toform a laminated structure or single layer structure.

[0158] On the EL layer 4304 is formed the cathode 4305 consisting of aconductive film having light blocking effect (typically conductive filmmainly composed of aluminum, copper or silver, or a film laminated withthem and other conductive film). Furthermore, it is preferable toeliminate as much as possible the humidity and oxygen which are at theinterface between the cathode 4305 and the EL layer 4304. Therefore, aworkmanship is required to continuously deposit both films in a vacuum,otherwise to form EL layer 4303 in nitrogen or rare gas atmosphere andthen form the cathode 4305 without coming into contact with the oxygenor humidity. In this embodiment, the above-mentioned film depositionbecomes possible by using a film deposition system of multi-chamber type(cluster tool type).

[0159] Then, the electrode 4305 is electrically connected with the wire4005 in the region shown by 4306. The wire 4005 is to supply theprescribed voltage to the electrode 4305 and is connected electricallyto the FPC 4006 via the anisotropic conductive film 4307.

[0160] As mentioned above, the EL element is formed consisting of thepixel electrode (anode) 4302, the EL layer 4304 and the cathode 4305.This EL element is surrounded by the covering material 4102, which islaminated to the substrate 4001 by the first sealing material 4101 andthe first sealing material 4101, and encapsulated with the loadingmaterial 4103.

[0161] As the covering material 4102, the glass, metals (typicallystainless material), ceramics, plastics (including plastic films) can beused. As the plastic material, FRP (Fiberglass Reinforced Plastics)plate, PVF (polyvinyl fluoride) film, Mylar film, polyester film oracrylic resin film can be used. Furthermore, a sheet composed of thealuminum foil inserted between the PVF films or Mylar films can be usedas well.

[0162] However, if the radiation of the light from the EL element isdirected to the covering material side, the covering material must betransparent. In such a case, a transparent substance like a glass plate,plastic plate, polyester film or acrylic film should be used.

[0163] For the loading material 4103, the ultraviolet curing resin orthermal curing resin can be used, and also PVC (polyvinyl chloride),acrylic, polyimide, epoxy resin, silicone resin, PVB (polyvinylbutyral), or EVA (ethylene-vinyl acetate) can be used. If a hygroscopicsubstance (preferably barium oxide) or other oxygen absorbent is put inthe interior of this loading material 4103, the degradation of ELelement can be prevented.

[0164] Furthermore, it is possible to put a spacer in the loadingmaterial 4103. In this case, the spacer can be formed with barium oxideto make the spacer itself hygroscopic. Furthermore, if the spacer isinstalled, it will be effective to provide a resin film on the cathode4305 as a buffer layer in order to reduce the pressure from the spacer.

[0165] Then the wire 4005 is connected electrically to FPC 4006 via theanisotropic conductive film 4307. The wire 4005 transmits to FPC 4006the signals, which are sent to the pixel part 4002, the drive circuit onthe source side 4003 and the drive circuit on the gate side 4004 andthen connected electrically with external equipment via FPC 4006.

[0166] Furthermore, in this embodiment the second sealing material 4104is provided so as to cover the exposed part of the first sealingmaterial 4101 and a part of FPC 4006 in order to achieve a structurewhich permits to shut out completely the outside air from the ELelement. The EL display having the sectional view of FIG. 14B isobtained in this way.

Embodiment 8

[0167] This embodiment describes an example different from FIGS. 14A and14B concerning the EL (electro-luminescence) display. Now, FIG. 15A isthe top view the EL display of this invention and FIG. 15B is thesectional view of the EL display of this invention. But for the parts,which have been already shown in FIGS. 14A and 14B, the same codes willbe utilized.

[0168] In FIGS. 15A and 15B, 4501 is a covering layer and it is formedon the substrate 4001 so as to cover the pixel part 4002, the drivecircuit on the source side 4003 and the drive circuit on the gate side4004.

[0169]FIG. 15B corresponds to the sectional view of FIG. 15A cut atA-A′, in which the interlayer insulating film 4301 made of resinmaterial is formed on the photodiode 4201 and the TFT 4202 for drivingEL, and then the pixel electrode (anode) 4302 is formed on it to connectelectrically with the drain of TFT 4202 for driving EL.

[0170] Then, the insulating film 4303 is formed on the pixel electrode4302, and an opening is formed in the insulating film 4303 on the pixelelectrode 4302. In this opening, the EL (electro-luminescence) layer4304 is formed on the pixel electrode 4302. For the EL layer 4304 awell-known organic EL material or inorganic EL material can be used.Furthermore, as the organic EL material, while there are low-molecularseries (monomer series) materials and high-molecular series (polymerseries) materials, both of them can be used.

[0171] As the fabrication method of EL layer 4304, a well-known vapordeposition technique or method of application technique can be used. Andfor the structure of EL layer, the hole injection layer, hole transportlayer, light emission layer, electron transport layer or electroninjection layer can be used in any combination to form a laminatedstructure or single layer structure.

[0172] On the EL layer 4304 is formed the cathode 4305 consisting of aconductive film having light blocking effect (typically conductive filmwith aluminum, copper or silver as the main component, or laminated filmwith them and other conductive film). Furthermore, it is preferable toeliminate as much as possible the humidity and oxygen which are at theinterface between the cathode 4305 and the EL layer 4304. Therefore,workmanship is required to continuously deposit both films in a vacuum,otherwise to form EL layer 4303 in nitrogen or rare gas atmosphere andthen form the cathode 4305 without coming into contact with the oxygenor humidity. In this embodiment, the above-mentioned film depositionbecomes possible by using a film deposition system of multi-chamber type(cluster tool type).

[0173] In this embodiment, a barrier layer 4501 is formed on the cathode4305. As the barrier layer 4501 in this embodiment, The DLC (Diamondlike carbon) film with addition of Si was used, but this embodiment isnot limited to this. Besides the DLC film with addition of Si, atantalum oxide, silicon nitride, aluminum nitride, silicon carbide orDLC film can also be used.

[0174] Since an EL layer has a weakness to the heat, the cathode and thebarrier layer are preferable to be formed at as low a temperature aspossible (more preferably between room temperature and 120° C.). Whilein this embodiment the barrier layer 4501 is formed in the plasma CVDmethod at a room temperature, it is also possible in the sputteringmethod. By forming the barrier layer in the plasma CVD method, it ispossible to form continuously the EL layer, the cathode, and the barrierlayer in the multi-chamber. The thickness of barrier layer is preferablyof 10 to 100 nm and, in this embodiment, the barrier layer 4501 wasformed at a thickness of 50 nm.

[0175] After the barrier layer formation 4501, a cover layer 4502consisting of organic resin is formed on the barrier 4501. Furthermore,after having solved the organic resin in the solvent and having preparedthe organic resin solution to an appropriate viscosity, it is positionedin the material chamber and applied in accordance with the electrolyticapplication method to form the covering layer 4502. At this moment, theviscosity of the organic resin solution is preferred to be of 1×10⁻³ to3×10⁻³ Pa.s.

[0176] Further at this moment, by adding a hygroscopic agent orantioxidant agent such as barium oxide in the interior of the organicresin solution to form a cover layer, the humidity and oxygen whichpromote the degradation of EL layer can be prevented from introducinginto the EL layer.

[0177] Then, the cathode 4305 is connected electrically with the wire4005 in the region shown by 4306. The wire 4005 is to supply theprescribed voltage to the cathode 4305 and is connected electrically tothe FPC 4006 via the anisotropic conductive film 4307.

[0178] For the covering material 4102, the glass, metals (typicallystainless material), ceramics and plastics (including plastic film) canbe used. As for the plastic material, FRP (Fiberglass-ReinforcedPlastics) plate, PVF (polyvinyl fluoride) film, Mylar film, polyesterfilm or acrylic resin film can be used. Furthermore, a sheet composed ofthe aluminum foil inserted between the PVF films or Mylar films can beused as well.

[0179] However, if the light coming from EL element is radiated in thedirection of the covering material, the covering material must betransparent. In such a case, a transparent substance such as glassplate, plastic plate, polyester film or acrylic film should be used.

[0180] Furthermore, it is possible to put a spacer in the covering layer4502. At this time, by forming the spacer with barium oxide, it ispossible to give a hygroscopicity to the spacer itself. Besides, in thecase where a spacer is installed, it is effective to provide a resinfilm on the cathode 4305 as a buffer layer in order to reduce thepressure from the spacer.

[0181] Furthermore, the wire 4005 is electrically connected with FPC4006 via the anisotropic conductive film 4307. The wire 4005 transmitsto FPC 4006 the signals that are sent to the pixel part 4002, the drivecircuit on the source side 4003 and the drive circuit on the gate side4004, and then connected electrically to external equipment by FPC 4006.

[0182] Besides, in this embodiment, the second sealing material 4104 isprovided so as to cover the exposed part of the first sealing material4101 and a part of FPC 4006 in order to get a structure permitting toshut out completely the outside air from the EL element. By these, theEL display having the sectional view of FIG. 15B is achieved.

[0183] The portable communication device of this invention is possibleto identify an individual by means of the functions of the sensorincorporated in the device and has a possibility to have a highreliability and simplicity, compared with the conventionalidentification works consisting of entering a numerical value (personalidentification number).

What is claimed is:
 1. A system for identifying an individual,comprising: a sensor-incorporated display; a means for readingbiological information of a user by means of said sensor-incorporateddisplay; a means for checking read biological information with referencebiological information; and a means for transmitting information about achecking result to a destination of communication in the case where saidchecking has matched.
 2. A system according to claim 1 , wherein saidbiological information of said user is a palm pattern or finger prints.3. A system according to claim 2 , wherein said palm pattern is thewhole or a part of user's palm.
 4. A system according to claim 1 ,wherein said sensor-incorporated display is a spontaneous light emittingdisplay.
 5. A system according to claim 1 , wherein saidsensor-incorporated display is an EL display.
 6. A system according toclaim 1 , wherein said sensor-incorporated display is a contact typearea sensor.
 7. A system for identifying an individual, comprising: asensor-incorporated display; a means for reading biological informationof a user by means of said sensor-incorporated display; a means forchecking read biological information with reference biologicalinformation; a means for transmitting information about a checkingresult to a destination of communication in the case where said checkinghas matched; and a means for notifying said user, after said destinationof communication receives information that said checking has matched,that communication between said user and said destination ofcommunication has been authorized.
 8. A system according to claim 7 ,wherein said biological information of a user is a palm pattern orfinger prints.
 9. A system according to claim 8 , wherein said palmpattern is the whole or a part of user's palm.
 10. A system according toclaim 7 , wherein said sensor-incorporated display is a spontaneouslight emitting display.
 11. A system according to claim 7 , wherein saidsensor-incorporated display is an EL display.
 12. A system according toclaim 7 , wherein said sensor-incorporated display is a contact typearea sensor.
 13. A system for identifying an individual comprising: asensor-incorporated display of a portable communication device; a meansfor reading biological information of a user by means of saidsensor-incorporated display; a means for checking read biologicalinformation with information stored in said portable communicationdevice; and a means for transmitting information about a checking resultto a destination of communication in the case where the checking hasmatched.
 14. A system according to claim 13 , wherein all said means canbe controlled by said user using operating keys provided on saidportable communication device.
 15. A system according to claim 14 ,wherein said operating keys can be controlled by only a dominant hand ofsaid user.
 16. A system according to claim 14 , wherein said operatingkeys can be controlled by only index finger of said user.
 17. A systemaccording to claim 14 , wherein said operating keys can be controlled byonly thumb of said user.
 18. A system according to claim 13 , whereinoperations are carried out at the same time as a power supply to saidportable communication device.
 19. A system according to claim 13 ,wherein said biological information of said user is a palm pattern orfinger prints.
 20. A system according to claim 19 , wherein said palmpattern is the whole or a part of user's palm.
 21. A system according toclaim 13 , wherein said sensor-incorporated display is a spontaneouslight emitting display.
 22. A system according to claim 13 , whereinsaid sensor-incorporated display is an EL display.
 23. A systemaccording to claim 13 , wherein said sensor-incorporated display is acontact type area sensor.
 24. A system for identifying an individualcomprising: a sensor-incorporated display of a portable communicationdevice; a means for reading biological information of a user by means ofsaid sensor-incorporated display; a means for checking read biologicalinformation with reference biological information stored in saidportable communication device; a means for transmitting informationabout a checking result to a destination of communication in the casewhere the checking has matched; and a means for transmitting informationthat communication between said user and said destination ofcommunication to said portable communication device has been authorizedafter said destination of communication receives information that saidchecking has matched.
 25. A system according to claim 24 , wherein allsaid means can be controlled by said user using operating keys providedon said portable communication device.
 26. A system according to claim25 , wherein said operating keys can be controlled by only a dominanthand of said user.
 27. A system according to claim 25 , wherein saidoperating keys can be controlled by only index finger of said user. 28.A system according to claim 25 , wherein said operating keys can becontrolled by only thumb of said user.
 29. A system according to claim24 , wherein operations are carried out at the same time as a powersupply to said portable communication device.
 30. A system according toclaim 24 , wherein said biological information of said user is a palmpattern or finger prints.
 31. A system according to claim 30 , whereinsaid palm pattern is the whole or a part of user's palm.
 32. A systemaccording to claim 24 , wherein said sensor-incorporated display is aspontaneous light emitting display.
 33. A system according to claim 24 ,wherein said sensor-incorporated display is an EL display.
 34. A systemaccording to claim 24 , wherein said sensor-incorporated display is acontact type area sensor.
 35. A system for identifying an individual,comprising: a sensor-incorporated display; a means for readingbiological information of a user by means of said sensor-incorporateddisplay; a means for checking read biological information with referencebiological information; and a means for transmitting information about achecking result to a destination of communication through Internet. 36.A system according to claim 35 , wherein said sensor-incorporateddisplay is a spontaneous light emitting display.
 37. A system accordingto claim 35 , wherein said sensor-incorporated display is an EL display.38. A system according to claim 35 , wherein said sensor-incorporateddisplay is a contact type area sensor.
 39. A system for identifying anindividual, comprising: a sensor-incorporated display of a portablecommunication device; a means for reading the biological information ofa user by means of said sensor-incorporated display; a means forchecking read biological information with reference biologicalinformation stored in said portable communication device; and a meansfor transmitting information about a checking result to a destination ofcommunication through Internet, only in the case where it is judgednecessary by said portable communication device or by the destination ofcommunication.
 40. A system according to claim 39 , wherein saidsensor-incorporated display is a spontaneous light emitting display. 41.A system according to claim 39 , wherein said sensor-incorporateddisplay is an EL display.
 42. A system according to claim 39 , whereinsaid sensor-incorporated display is a contact type area sensor.
 43. Asystem for identifying an individual, comprising: a sensor-incorporateddisplay; a means for reading biological information of a user by meansof said sensor-incorporated display; a means for checking readbiological information with reference biological information; a meansfor transmitting information about a checking result to a destination ofcommunication through Internet; and a means for notifying said user thatthe communication between said user and said destination ofcommunication has been authorized after said destination ofcommunication receives information that said checking has matched.
 44. Asystem according to claim 43 , wherein said sensor-incorporated displayis a spontaneous light emitting display.
 45. A system according to claim43 , wherein said sensor-incorporated display is an EL display.
 46. Asystem according to claim 43 , wherein said sensor-incorporated displayis a contact type area sensor.
 47. A system for identifying anindividual, comprising: a sensor-incorporated display of a portablecommunication device; a means for reading biological information of auser by means of said sensor-incorporated display; a means for checkingread biological information with reference biological information storedin said portable communication device; a means for transmittinginformation about a checking result to a destination of communicationthrough Internet, only in the case where it is judged necessary by saidportable communication device or by the destination of communication;and a means for transmitting information that the communication betweensaid user and said destination of communication has been authorized tosaid portable communication device through the Internet, after saiddestination of communication receives information that said checking hasmatched,.
 48. A system according to claim 47 , wherein saidsensor-incorporated display is a spontaneous light emitting display. 49.A system according to claim 47 , wherein said sensor-incorporateddisplay is an EL display.
 50. A system according to claim 47 , whereinsaid sensor-incorporated display is a contact type area sensor.
 51. Amethod for identifying an individual, comprising steps of: reading thebiological information of a user by means of a sensor-incorporateddisplay; checking read biological information with reference biologicalinformation; and transmitting information about a checking result to adestination of communication in the case where the checking has matched.52. A method according to claim 51 , wherein said biological informationof said user is a palm pattern or finger prints.
 53. A method accordingto claim 52 , wherein the palm pattern is the whole or a part of user'spalm.
 54. A method according to claim 51 , wherein saidsensor-incorporated display is a spontaneous light emitting display. 55.A method according to claim 51 , wherein said sensor-incorporateddisplay is an EL display.
 56. A method according to claim 51 , wherein asensor that said sensor-incorporated display has is an area sensor ofcontact types.
 57. A method for identifying an individual, comprisingsteps of: reading biological information of a user by means of asensor-incorporated display; checking read biological information withreference biological information; transmitting information about achecking result to a destination of communication in the case where thechecking has matched and notifying said user, after the destination ofcommunication receives information that said checking has matched, thatcommunication between said user and said destination of communicationhas been authorized.
 58. A method according to claim 57 , wherein saidbiological information of said user is a palm pattern or finger prints.59. A method according to claim 58 , wherein the palm pattern is thewhole or a part of user's palm.
 60. A method according to claim 57 ,wherein said sensor-incorporated display is a spontaneous light emittingdisplay.
 61. A method according to claim 57 , wherein saidsensor-incorporated display is an EL display.
 62. A method according toclaim 57 , wherein a sensor that said sensor-incorporated display has isan area sensor of contact types.
 63. A method for identifying anindividual, comprising steps of: reading biological information of auser by means of a sensor-incorporated display of portable communicationdevice; checking read biological information with reference biologicalinformation stored in said portable communication device; andtransmitting information about a checking result to a destination ofcommunication in the case where said checking has matched.
 64. A methodaccording to claim 63 , wherein all said steps can be controlled by saiduser using operating keys provided on said portable communicationdevice.
 65. A method according to claim 64 , wherein said operating keyscan be controlled by only a dominant hand of said user.
 66. A methodaccording to claim 64 , wherein said operating keys can be controlled byonly index finger of said user.
 67. A method according to claim 64 ,wherein said operating keys can be controlled by only thumb of saiduser.
 68. A method according to claim 63 , wherein operations arecarried out at the same time as a power supply to said portablecommunication device.
 69. A method according to claim 63 , wherein saidbiological information of said user is a palm pattern or finger prints.70. A method according to claim 69 , wherein the palm pattern is thewhole or a part of user's palm.
 71. A method according to claim 63 ,wherein said sensor-incorporated display is a spontaneous light emittingdisplay.
 72. A method according to claim 63 , wherein saidsensor-incorporated display is an EL display.
 73. A method according toclaim 63 , wherein a sensor that said sensor-incorporated display has isan area sensor of contact types.
 74. A method for identifying anindividual comprising steps of: reading biological information of a userby means of a sensor-incorporated display of portable communicationdevice; checking read biological information with reference biologicalinformation stored in said portable communication device;, transmittinginformation about a checking result to a destination of communication inthe case where the checking has matched; and transmitting informationthat communication between said user and said destination ofcommunication has been authorized to said portable communication deviceafter the destination of communication receives information that saidchecking has matched.
 75. A method according to claim 74 , wherein allsaid steps can be controlled by said user using operating keys providedon said portable communication device.
 76. A method according to claim75 , wherein said operating keys can be controlled by only a dominanthand of said user.
 77. A method according to claim 75 , wherein saidoperating keys can be controlled by only index finger of said user. 78.A method according to claim 75 , wherein said operating keys can becontrolled by only thumb of said user.
 79. A method according to claim74 , wherein operations are carried out at the same time as a powersupply to said portable communication device.
 80. A method according toclaim 74 , wherein said biological information of said user is a palmpattern or finger prints.
 81. A method according to claim 80 , whereinthe palm pattern is the whole or a part of user's palm.
 82. A methodaccording to claim 74 , wherein said sensor-incorporated display is aspontaneous light emitting display.
 83. A method according to claim 74 ,wherein said sensor-incorporated display is an EL display.
 84. A methodaccording to claim 74 , wherein a sensor that said sensor-incorporateddisplay has is an area sensor of contact types.
 85. A method foridentifying an individual, comprising steps of: reading biologicalinformation of a user by means of a sensor-incorporated display;checking read biological information with reference biologicalinformation; and transmitting information about checking result to adestination of communication through Internet.
 86. A method according toclaim 85 , wherein said sensor-incorporated display is a spontaneouslight emitting display.
 87. A method according to claim 85 , whereinsaid sensor-incorporated display is an EL display.
 88. A methodaccording to claim 85 , wherein a sensor that said sensor-incorporateddisplay has is an area sensor of contact types.
 89. A method foridentifying an individual, comprising steps of: reading biologicalinformation of a user by means of a sensor-incorporated display of aportable communication device; checking read biological information withreference biological information stored in said portable communicationdevice; and transmitting information about a checking result to adestination of communication through Internet, only in the case where itis judged necessary by said portable communication device or by thedestination of communication.
 90. A method according to claim 89 ,wherein said sensor-incorporated display is a spontaneous light emittingdisplay.
 91. A method according to claim 89 , wherein saidsensor-incorporated display is an EL display.
 92. A method according toclaim 89 , wherein a sensor that said sensor-incorporated display has isan area sensor of contact types.
 93. A method for identifying anindividual, comprising steps of: reading biological information of auser by means of a sensor-incorporated display; checking read biologicalinformation with reference biological information; transmittinginformation about a checking result to a destination of communicationthrough Internet; and notifying said user, after said destination ofcommunication receives information that the checking has matched, thatcommunication between said user and said destination of communicationhas been authorized.
 94. A method according to claim 92 , wherein saidsensor-incorporated display is a spontaneous light emitting display. 95.A method according to claim 92 , wherein said sensor-incorporateddisplay is an EL display.
 96. A method according to claim 92 , wherein asensor that said sensor-incorporated display has is an area sensor ofcontact types.
 97. A method for identifying an individual, comprisingsteps of: reading biological information of a user by means of asensor-incorporated display of a portable communication device; checkingread biological information with reference biological information storedin said portable communication device; transmitting information about achecking result to a destination of communication through Internet, onlyin the case where it is judged necessary at said portable communicationdevice or at the destination of communication; and transmittinginformation to said portable communication device through the Internet,after said destination of communication receives information that saidchecking has matched, that the communication between said user and saiddestination of communication has been authorized.
 98. A method accordingto claim 97 , wherein said sensor-incorporated display is a spontaneouslight emitting display.
 99. A method according to claim 97 , whereinsaid sensor-incorporated display is an EL display.
 100. A methodaccording to claim 97 , wherein a sensor that said sensor-incorporateddisplay has is an area sensor of contact types.